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91.
92.
93.
We study the domain of existence of a solution to a Riemann problem for the pressure gradient equation in two space dimensions. The Riemann problem is the expansion of a quadrant of gas of constant state into the other three vacuum quadrants. The global existence of a smooth solution was established in Dai and Zhang [Z. Dai, T. Zhang, Existence of a global smooth solution for a degenerate Goursat problem of gas dynamics, Arch. Ration. Mech. Anal. 155 (2000) 277-298] up to the free boundary of vacuum. We prove that the vacuum boundary is the coordinate axes. 相似文献
94.
95.
Baowei Qiao Jie Feng Yun Ling Ting’ao Tang Bomy Chen 《Applied Surface Science》2006,252(24):8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. 相似文献
96.
Ling-yan Tang Song-he Song 《应用数学学报(英文版)》2007,23(2):303-310
In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities. 相似文献
97.
Jian‐guo Tang 《Mathematical Methods in the Applied Sciences》2006,29(11):1327-1338
An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
98.
We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics. 相似文献
99.
100.
Huazhong Tang Tao Tang Kun Xu 《Zeitschrift für Angewandte Mathematik und Physik (ZAMP)》2004,55(3):365-382
In this paper, the Kinetic Flux Vector Splitting (KFVS)
scheme is extended to solving the shallow water equations with
source terms. To develop a well-balanced scheme between the source
term and the flow convection, the source term effect is accounted
in the flux evaluation across cell interfaces. This leads to a
modified gas-kinetic scheme with particular application to the
shallow water equations with bottom topography. Numerical
experiments show better resolution of the unsteady solution than
conventional finite difference method and KFVS method with little
additional cost. Moreover, some positivity properties of the
gas-kinetic scheme is established. 相似文献